advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low gate charge r ds(on) 9m fast switching i d 60a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 2.8 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200810134 1 a p70t03gh/j-hf halogen-free product maximum thermal resistance, junction-ambient (pcb mount) 3 parameter rating drain-source voltage 30 gate-source voltage + 20 continuous drain current, v gs @ 10v 60 continuous drain current, v gs @ 10v 43 pulsed drain current 1 195 total power dissipation 53 -55 to 175 operating junction temperature range -55 to 175 linear derating factor 0.36 thermal data parameter storage temperature range g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap70t03gj) are available for low-profile applications. g d s to-252(h) g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =33a - - 9 m ? v gs =4.5v, i d =20a - - 18 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs v ds =10v, i d =33a - 35 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =24v ,v gs =0v - - 250 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =33a - 17 27 nc q gs gate-source charge v ds =20v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10 - nc q oss output charge v dd =15v,v gs =0v - 13.5 22 nc t d(on) turn-on delay time 2 v ds =15v - 8 - ns t r rise time i d =33a - 105 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 22 - ns t f fall time r d =0.45 -9- ns c iss input capacitance v gs =0v - 1485 2400 pf c oss output capacitance v ds =25v - 245 - pf c rss reverse transfer capacitance f=1.0mhz - 170 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =33a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =20a, v gs =0v, - 27 - ns q rr reverse recovery charge di/dt=100a/s - 20 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap70t03gh/j-hf 3.surface mounted on 1 in 2 copper pad of fr4 board
a p70t03gh/j-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 30 60 90 120 0.0 1.5 3.0 4.5 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 8.0v 6.0v v g =4.0v 0 50 100 150 200 0.0 1.5 3.0 4.5 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v v g =4.0v 0.4 0.8 1.2 1.6 2 -50 25 100 175 t j , junction temperature ( o c) normalized r ds(on) i d =33a v g =10v 0 20 40 60 0 4 8 12 16 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 0.1 1 10 100 1000 0 0.5 1 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.5 1 1.5 2 2.5 -50 25 100 175 t j , junction temperature ( o c ) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap70t03gh/j-hf 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 10us 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =33a v ds =16v v ds =20v v ds =24v 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
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